A monolithically integrated bacteriorhodopsin/GaAs MODFET bio-photoreceiver

Author

Xu, J. ; Bhattacharya, P. ; Varo, G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

2

fYear

2001

fDate

2001

Firstpage

833

Abstract

We report the first monolithic integration of selectively deposited bacteriorhodopsin (bR), acting as a photodetector, with a GaAs-based modulation doped field effect transistor (MODFET). The photovoltage developed across the bR is applied across the gate of the FET. In essence, the large photovoltage developed across bR is converted to a photocurrent. We believe these sensors will be extremely useful for imaging arrays and artificial vision applications

Keywords

HEMT integrated circuits; biomolecular electronics; equivalent circuits; gallium arsenide; high electron mobility transistors; integrated optoelectronics; photoconductivity; photodetectors; photovoltaic effects; proteins; GaAs; artificial vision; bacteriorhodopsin photodetector; bio-photoreceiver; cell membrane; complex photochemical cycle; equivalent circuit; imaging arrays; light-harvesting protein; modulation doped field effect transistor; monolithic integration; photocurrent; photoisomerization; photovoltage; polarization sensitivity; purple membrane sheet; selectively deposited bacteriorhodopsin; Epitaxial layers; FETs; Gallium arsenide; HEMTs; Image sensors; MODFETs; Monolithic integrated circuits; Photoconductivity; Photodetectors; Sensor arrays;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969074

Filename

969074