DocumentCode :
1967524
Title :
Fabrication of lnGaAs Strained Quantum Wires Using Selective MOCVD Growth on SiO2-Patterned GaAs Substrate
Author :
Nishioka, M. ; Tsukamoto, S. ; Tanaka, T. ; Nagamune, Y. ; Arakawa, Y.
Author_Institution :
University of Tokyo, Japan
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
61
Lastpage :
62
Keywords :
Chemical technology; Chemical vapor deposition; Crystallization; Electrons; Fabrication; Gallium arsenide; Indium gallium arsenide; MOCVD; Substrates; Wires;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664936
Filename :
664936
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1967524
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