Single electron charging of Sn nanocrystals in thin SiO/sub 2/ film formed by low energy ion implantation

Author

Nakajima, A. ; Futatsugi, T. ; Horiguchi, N. ; Nakao, H. ; Yokoyama, N.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1997

fDate

10-10 Dec. 1997

Firstpage

159

Lastpage

162

Abstract

We report on a simple technique for fabricating a Sn nanocrystal array in thin SiO/sub 2/ film. This technique uses low energy ion implantation followed by thermal annealing. Isolated Sn nanocrystals 5 nm in diameter are formed in an array with excellent size and position uniformity. Barrier height between a Sn nanocrystal and the substrate was obtained by measuring the temperature and frequency dependence of the capacitance of the diode structure. Single electron charging effects of the Sn nanocrystals were observed from current-voltage characteristics.

Keywords

annealing; ion implantation; nanostructured materials; nanotechnology; quantum interference devices; quantum interference phenomena; silicon compounds; tin; Si; Sn-SiO/sub 2/-Si; barrier height; capacitance; current-voltage characteristics; diode structure; frequency dependence; low energy ion implantation; nanocrystal array; position uniformity; single electron charging; size uniformity; temperature dependence; thermal annealing; Annealing; Capacitance measurement; Electrons; Frequency measurement; Ion implantation; Nanocrystals; Substrates; Temperature dependence; Temperature measurement; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-4100-7

Type

conf

DOI

10.1109/IEDM.1997.650291

Filename

650291