Title :
The effect of ion implantation on the gate oxide integrity of SOI wafers
Author :
Terauchi, M. ; Samata, S. ; Kubota, Hajime ; Yoshimi, M.
Author_Institution :
Adv. Semicond. Device Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
The effect of ion implantation on the gate oxide integrity (GOI) of SOI wafers has been investigated. It has been found that the GOI of SOI wafers is significantly affected by ion implantation to the SOI layer before gate oxidation. SOI wafers are found to be more sensitive to metal contamination than bulk wafers because the buried oxide (BOX) layer functions as a diffusion barrier for metal contamination. The effect of the SOI-BOX interface on the gettering of metal contamination is also discussed.
Keywords :
buried layers; dielectric thin films; getters; integrated circuit reliability; integrated circuit technology; integrated circuit testing; ion implantation; oxidation; silicon-on-insulator; surface contamination; BOX layer; GOI; SOI wafers; SOI-BOX interface; Si-SiO/sub 2/; buried oxide layer; diffusion barrier; gate oxidation; gate oxide integrity; gettering; ion implantation; ion implantation effects; metal contamination; metal contamination gettering; CMOS technology; Capacitors; Contamination; Doping; Fabrics; Gettering; Ion implantation; Oxidation; Pollution measurement; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723143
