Title :
Using electric field induced second harmonic generation to probe electric fields in semiconductor devices
Author :
Kane, Daniel J. ; Peterson, Kristen A.
Author_Institution :
Southwest Sci. Inc., Santa Fe, NM, USA
Abstract :
We observe the voltage dependent electric field induced second harmonic generation from the active region of a GaN UV light emitting diode (LED) (Nichia). By probing below one half the bandgap using a Ti:sapphire laser, we can still take advantage of near-resonance enhancement at the second harmonic while reducing absorption (invasiveness) and allowing penetration into the device. Ultimately, we hope to use this technique to probe silicon-based integrated circuits using infrared light
Keywords :
III-V semiconductors; electric field measurement; electro-optical effects; gallium compounds; integrated circuit testing; light emitting diodes; optical harmonic generation; optical sensors; semiconductor device testing; GaN; GaN UV light emitting diode; Ti:sapphire laser; active region; bandgap; electric field induced second harmonic generation; electric field probing; near-resonance enhancement; second harmonic; semiconductor devices; silicon-based integrated circuits; voltage dependent electric field induced second harmonic generation; Frequency conversion; Gallium nitride; Laser beams; Optical harmonic generation; Probes; Semiconductor devices; Semiconductor lasers; Silicon; Surface emitting lasers; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969086
