Title :
Electromagnetically shielded high-Q CMOS-compatible copper inductors
Author :
Hongrui Jiang ; Yeh, J.-L.A. ; Ye Wang ; Norman Tien
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
On-chip inductors are valuable components in radio-frequency (RF) circuits, which find widespread applications in wireless communication. The performance of current on-chip spiral inductors generally suffers from low quality factor (Q), the detrimental coupling between the device and its ambient via the silicon substrate, and the lack of a good RF ground plane because of the lossy substrate. A solution to these issues is to build a suspended spiral inductor over a cavity whose bottom plane and side-walls are metallized. The deep cavity can dramatically reduce the electromagnetic coupling and the parasitic capacitance between the inductor and the substrate, increasing Q and the self-resonant frequency.
Keywords :
CMOS integrated circuits; Q-factor; copper; electromagnetic shielding; inductors; CMOS IC; Cu; RF circuit; electromagnetic coupling; electromagnetic shielding; on-chip spiral inductor; parasitic capacitance; quality factor; self-resonant frequency; silicon substrate; wireless communication; Copper; Coupling circuits; Inductors; Metallization; Performance loss; Q factor; Radio frequency; Silicon; Spirals; Wireless communication;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839803