Title :
Raman spectroscopy of Mg-doped gallium nitride: shift of the A/sub 1/(LO) phonon
Author :
Burton, J.C. ; Cohen, S. ; Lukacs, S.J. ; Long, F.H. ; Liang, S. ; Lu, Y. ; Li, Y. ; Tran, C.
Author_Institution :
Rutgers Univ., Piscataway, NJ, USA
Abstract :
For the development of improved devices, the control and understanding of the electrical properties of nitride semiconductors is essential. Although significant progress has been made in recent years, the p-type doping of nitride semiconductors has proven to be challenging. It has been found necessary to anneal the sample after growth at moderate (700/spl deg/C-900/spl deg/C) temperatures in order to electrically activate the dopants. In order to help in the development of improved p-type doped GaN and other group III-nitrides, we have undertaken a study of the Raman spectroscopy of p-type doped GaN under a variety of processing conditions.
Keywords :
III-V semiconductors; Raman spectra; annealing; gallium compounds; magnesium; phonons; semiconductor doping; A/sub 1/(LO) phonon; GaN:Mg; Raman spectroscopy; annealing; electrical activation; nitride semiconductor; p-type doping; Annealing; Frequency; Gallium nitride; III-V semiconductor materials; Laser theory; Phonons; Photonic band gap; Physics; Spectroscopy; Tail;
Conference_Titel :
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi
Conference_Location :
Montreal, Que., Canada
Print_ISBN :
0-7803-3891-X
DOI :
10.1109/LEOSST.1997.619261
