Title :
High power performance of ultrahigh bandwidth MSM TWPDs
Author :
Shi, Jin-Wei ; Kian-Giap Gang ; Chiu, Yi-Jen ; Bowers, John E. ; Sun, Chi-Kuang
Author_Institution :
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Low-temperature-grown GaAs (LTG-GaAs) based photodetectors (PDs) merit a lot of attention due to their ultrahigh electrical bandwidth performance. By utilizing photomixing technique, these high speed PDs can radiate power in the THz frequency regime. In such application, these PDs usually need to experience high optical power illumination and operate in high bias voltage. In this paper, we studied the behavior of a novel MSM traveling wave photodetector (MSM TWPD) under high optical power illumination and high bias level by electrical-optical sampling technique based on a femtosecond Ti:sapphire laser. This novel device has been demonstrated with ultrahigh bandwidth (570 GHz) and reasonable quantum efficiency (8%). With a large photoabsorption volume and better capability of undertaking high bias voltage, improved high power performance can also be obtained in this device compared with previous LTG-GaAs based p-i-n TWPD
Keywords :
III-V semiconductors; gallium arsenide; metal-semiconductor-metal structures; photodetectors; transient response; 570 GHz; GaAs; MSM traveling wave photodetector; carrier lifetime; carrier multiplication; electro-optical sampling; high bias level; high optical power illumination; high power performance; impulse response; large photoabsorption volume; low-temperature-grown; ultrahigh bandwidth; Bandwidth; Frequency; Gallium arsenide; High speed optical techniques; Lighting; Photodetectors; Power lasers; Sampling methods; Ultrafast optics; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969101
