Title :
High-speed InGaAs based resonant cavity enhanced p-i-n photodiodes
Author :
Kimukin, Ibrahim ; Biyikli, Necmi ; Ozbay, Ekmel
Author_Institution :
Dept. of Phys., Bilkent Univ., Ankara, Turkey
Abstract :
High-speed, high-efficiency photodetectors play an important role in optical communication and measurement systems. The photodiode performance is measured by the bandwidth-efficiency product (BWE) and is limited for conventional vertically illuminated photodiodes (VPDs) due to the bandwidth-efficiency tradeoff. This tradeoff arises from the fact that the quantum efficiency and bandwidth of a conventional VPD, have inverse dependencies on the photoabsorption layer thickness. To overcome the BWE limitation for such conventional VPDs, two alternative detection schemes were offered: edge-coupled photodiodes and resonant-cavity-enhanced photodiodes (RCE-PDs). Both PD structures have demonstrated excellent performances and are potential candidates as photodetectors for future high bitrate optical communication systems. The ease of fabrication, integration, and optical coupling makes the RCE-PD more attractive for high-performance photodetection
Keywords :
III-V semiconductors; cavity resonators; gallium arsenide; indium compounds; optical receivers; p-i-n photodiodes; photodetectors; 31 GHz; InGaAs; PECVD; bandwidth-efficiency product; epilayer structure; high bitrate optical communication; high-speed photodetectors; microwave-compatible process; photoabsorption layer thickness; pulse response; quantum efficiency; resonant cavity enhanced p-i-n photodiodes; reverse bias; temporal response; transfer matrix method; Coplanar waveguides; Diodes; Etching; High speed optical techniques; Indium gallium arsenide; Optical saturation; PIN photodiodes; Photodetectors; Resonance; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969102
