Title :
Ultra-wide dynamic range 1.75 dB noise-figure, 900 MHz CMOS LNA
Author :
Gramegna, G. ; Magazzu, A. ; Sclafani, C. ; Paparo, M.
Author_Institution :
STMicroelectron., Catania, Italy
Abstract :
Efforts toward single-chip transceivers for wireless communications motivate integration of the low-noise amplifier (LNA) in CMOS technology. However, LNA design for CDMA and W-CDMA/UMTS transceivers operating from 860 to 2150 MHz typically requires input IP3/spl ges/0 dBm and noise figure NF/spl les/1.8. A wide-dynamic-range 900 MHz CMOS LNA uses the CMOS part of an RF dedicated BiCMOS process with 0.35 /spl mu/m minimum channel length. The process features on-chip inductors with Q>8-10, nMOS f/sub T/>26 GHz and nMOS transistors separated from the substrate.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; code division multiple access; integrated circuit noise; transceivers; 0.35 micron; 1.75 dB; 860 to 2150 MHz; 900 MHz; CDMA; CMOS LNA; CMOS technology; IP3; W-CDMA/UMTS; dedicated BiCMOS process; low-noise amplifier; minimum channel length; noise figure; on-chip inductors; single-chip transceivers; transceivers; ultra-wide dynamic range; wireless communications; 3G mobile communication; CMOS process; CMOS technology; Dynamic range; Low-noise amplifiers; Multiaccess communication; Noise figure; Radio frequency; Transceivers; Wireless communication;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839824
