DocumentCode :
1968238
Title :
Large Signal Effects in the Avalanche Region of High-Efficiency Impatt Diodes
Author :
Blakey, P.A.
Author_Institution :
Department of Electronic and Electrical Engineering, Unviersity College London, Torrington Place, London WClE 7 JE, England.
fYear :
1976
fDate :
14-17 Sept. 1976
Firstpage :
331
Lastpage :
335
Abstract :
The avalanche regions of ´lo-hi-lo´ and ´hi-la´ IMPATTs are significantly different even though their drift regions may be similar. It is likely that this will cause differences in the large signal behaviour of the two structures. This possibility is investigated using computer simulation.
Keywords :
Computer simulation; Current density; Diodes; Educational institutions; Frequency; Gallium arsenide; Power generation; Resonance; Temperature dependence; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1976. 6th European
Conference_Location :
Rome, Italy
Type :
conf
DOI :
10.1109/EUMA.1976.332296
Filename :
4130962
Link To Document :
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