Title :
Room temperature silicon single-electron quantum-dot transistor switch
Author :
Lei Zhuang ; Lingjie Guo ; Chou, S.Y.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. Analysis of its I-V characteristic indicates that the energy level separation is about 110 meV and the silicon dot size is about 12 nm.
Keywords :
elemental semiconductors; field effect transistor switches; semiconductor quantum dots; semiconductor quantum wells; silicon; single electron transistors; I-V characteristic; Si; drain current oscillation; energy level; room temperature; silicon single-electron quantum-dot transistor switch; Energy states; MOSFETs; Oxidation; Plasma temperature; Quantum dots; Silicon on insulator technology; Single electron transistors; Switches; Temperature dependence; Voltage;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650296
