Title :
A 1000-MIPS/W microprocessor using speed adaptive threshold-voltage CMOS with forward bias
Author :
Miyazaki, M. ; Ono, G. ; Hattori, T. ; Shiozawa, K. ; Uchiyama, K. ; Ishibashi, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
Substrate bias is continuously controlled from -1.5 V (backward bias) to 0.5 V (forward bias) to compensate for fabrication fluctuation, supply voltage variation, and operating temperature variation. A speed-adaptive threshold-voltage (SA-Vt) CMOS with forward bias is used in a 4.3M transistor microprocessor. The SA-Vt CMOS with forward bias occupies 320/spl times/400 /spl mu/m/sup 2/ and consumes 4 mA. The processor provides 400 VAX MIPS at 1.5 to 1.8 V with 320 to 380mW dissipation. It achieves >1000-MIPS/W performance.
Keywords :
CMOS digital integrated circuits; microprocessor chips; 1.5 to 1.8 V; 320 to 380 mW; 4 mA; CMOS microprocessor; forward bias; speed adaptive threshold voltage design; CMOS integrated circuits; Centralized control; Delay lines; Large scale integration; MOSFETs; Microprocessors; Ring oscillators; Semiconductor device measurement; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference, 2000. Digest of Technical Papers. ISSCC. 2000 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-5853-8
DOI :
10.1109/ISSCC.2000.839842