An automated small-signal parameter extraction technique for HBTs using ICCAP

Author

Chitrashekaraiah, S. ; Dharmasiri, C.N. ; Rezazadeh, A.A.

Author_Institution

Dept. of Electr. Eng. & Electron., UMIST, Manchester, UK

fYear

2004

fDate

6-7 Sept. 2004

Firstpage

151

Lastpage

156

Abstract

This work presents an automated toolkit for the extraction of small-signal parameters of heterojunction bipolar transistors (HBTs) using Agilent´s IC evaluation characterisation and analysis program (ICCAP). On-wafer S-parameters of a 16×20 μm² InGaP/GaAs double HBT (DHBT) for different bias conditions are measured and analysed over a wide temperature range, -25°C to +110°C. These measured data are used in the extraction of small-signal parameters and compared with ADS simulations to verify and validate the developed small-signal extraction toolkit.

Keywords

III-V semiconductors; S-parameters; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; -25 to 110 degC; 16 micron; 20 micron; DHBT bias conditions; IC evaluation characterisation and analysis program; ICCAP; InGaP-GaAs; automated small-signal parameter extraction technique; double HBT temperature range; heterojunction bipolar transistors; on-wafer S-parameter measurement; Bipolar transistors; Capacitance; DH-HEMTs; Data mining; Heterojunction bipolar transistors; III-V semiconductor materials; Integrated circuit measurements; Parameter extraction; Scattering parameters; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

High Frequency Postgraduate Student Colloquium, 2004

Print_ISBN

0-7803-8426-1

Type

conf

DOI

10.1109/HFPSC.2004.1360377

Filename

1360377