Title :
600 V single-chip power conversion system based on thin layer silicon-on-insulator
Author :
Letavic, T. ; Arnold, E. ; Simpson, M. ; Peters, E. ; Aquino, R. ; Egloff, R. ; Wong, Simon ; Mukherjee, S.
Author_Institution :
Res. Lab., Philips Electron.North America Corp., Briarcliff Manor, NY, USA
Abstract :
Summary form only given. An integrated 600 V power conversion circuit is described based on smart power technology which combines novel lateral high-voltage RESURF transistor structures and a merged bipolar/CMOS/DMOS process flow on thin-layer SOI substrates. A modular process flow provides for the integration of half-bridge power stages along with level shifting and lowand medium-voltage control. This opens new application areas for thin-layer SOI, such as lighting electronics, power modules, motor control, etc., and is a significant development for the integration of power conversion systems.
Keywords :
BIMOS integrated circuits; integrated circuit design; power convertors; power integrated circuits; silicon-on-insulator; 600 V; Si-SiO/sub 2/; half-bridge power stage integration; integrated power conversion circuit; lateral high-voltage RESURF transistor structures; level shifting control; lighting electronics; low-voltage control; medium-voltage control; merged bipolar/CMOS/DMOS process flow; modular process flow; motor control; power conversion system integration; power modules; single-chip power conversion system; smart power technology; thin layer SOI application areas; thin layer silicon-on-insulator; thin-layer SOI substrates; CMOS logic circuits; CMOS technology; Circuit topology; Fabrication; Logic devices; Medium voltage; Power conversion; Power integrated circuits; Silicon on insulator technology; Surface waves;
Conference_Titel :
SOI Conference, 1998. Proceedings., 1998 IEEE International
Conference_Location :
Stuart, FL, USA
Print_ISBN :
0-7803-4500-2
DOI :
10.1109/SOI.1998.723147
