DocumentCode :
1968687
Title :
Two Dimensional Analysis of the GaAs Double Hetero Stripe-Geometry Laser
Author :
Rozzi, T. ; Itoh, T.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
fYear :
1976
fDate :
14-17 Sept. 1976
Firstpage :
495
Lastpage :
498
Abstract :
The GaAlAs/GaAs stripe-geometry laser is analyzed using a new technique called the effective dielectric constant (EDC) method. Unlike previously reported techniques, use of the EDC method allows both vertical and sideward directions in the cross section of the laser to be taken into account in analyzing the field confinement mechanism. Computed data on field concentration and cutoff behavior are presented.
Keywords :
Attenuation; Dielectric constant; Eigenvalues and eigenfunctions; Electrodes; Gallium arsenide; High-K gate dielectrics; Laser beam cutting; Optical waveguides; Refractive index; Slabs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1976. 6th European
Conference_Location :
Rome, Italy
Type :
conf
DOI :
10.1109/EUMA.1976.332324
Filename :
4130990
Link To Document :
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