DocumentCode
1968722
Title
Intermodulation distortion characterisation and analysis of the InGaP/GaAs DHBT
Author
Khan, A. ; Dharmasiri, C.N. ; Rezazadeh, A.A.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear
2004
fDate
6-7 Sept. 2004
Firstpage
177
Lastpage
182
Abstract
The two-tone intermodulation distortion (IMD) characteristic behaviour of microwave InGaP/GaAs double heterojunction bipolar transistors (DHBTs) is studied. This is carried out through measurement, with the results being compared to a simple analytical technique. Both mid frequency (50 MHz) and high frequency (2 GHz) ranges are characterised and the results compared. In addition, the effect of varying input bias levels on the non-linearities has been studied.
Keywords
III-V semiconductors; UHF bipolar transistors; gallium compounds; heterojunction bipolar transistors; indium compounds; intermodulation distortion; microwave bipolar transistors; 2 GHz; 50 MHz; DHBT nonlinearities; IMD; InGaP-GaAs; double heterojunction bipolar transistors; input bias levels; microwave transistors; two-tone intermodulation distortion; Capacitance; Diodes; Electrical resistance measurement; Electromagnetics; Frequency; Gallium arsenide; Intermodulation distortion; Microwave technology; Scattering parameters; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Frequency Postgraduate Student Colloquium, 2004
Print_ISBN
0-7803-8426-1
Type
conf
DOI
10.1109/HFPSC.2004.1360384
Filename
1360384
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