Title :
Millimeter Impatt Amplifier Optimization for Telecommunication Systems
Author :
Doumbia, I. ; De Jaeger, J.C. ; Salmer, G.
Author_Institution :
CENTRE HYPERFREQUENCES & SEMICONDUCTEURS - E.R.A. au C.N.R.S. n° 454 Université de LILLE I BP 36 59650 VILLENEUVE D´´ASCQ France.
Abstract :
High and moderate power Ka-Band (33-40 GHz) Impatt diode amplifiers for use especially in telecommunication systems have been investigated. We point out the means of obtaining optimal conditions (for SDR or DDR diode parameters and operating conditions) for the principal amplifier characteristics : gain-bandwidth product, output power levels, group delay variations, AM-PM conversion rates. The theoretical results achieved, corroborated by the experimental ones, show the excellent behaviour of these Impatt amplifiers operating in telecommunication systems.
Keywords :
Bandwidth; Circuit stability; Coaxial components; Current density; Delay; Frequency; High power amplifiers; Power amplifiers; Power generation; Semiconductor diodes;
Conference_Titel :
Microwave Conference, 1976. 6th European
Conference_Location :
Rome, Italy
DOI :
10.1109/EUMA.1976.332330
