• DocumentCode
    1969071
  • Title

    New Transistor Operating for High Frequency and High Power

  • Author

    Nishizawa, Jun-ichi ; Kato, Yoji

  • Author_Institution
    Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
  • fYear
    1976
  • fDate
    14-17 Sept. 1976
  • Firstpage
    616
  • Lastpage
    620
  • Abstract
    The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate series resistance, (3) small gate-source capacitance, (4) small gate-drain capacitance. Si SIT exhibits GHz operation: 200 MHz-40 watts, 1 GHz-5 watts, cut-off frequency is more than 2.0 GHz. Further developments of higher frequency and, higher power devices can be realized in distributed structure and travelling-wave operation of SIT. It will be soon possible to prepare an SIT which operates 100 watts out-put power at GHz frequencies.
  • Keywords
    Capacitance; Communication system control; Electrodes; FETs; Frequency; Impedance; Impurities; Microwave transistors; Negative feedback; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1976. 6th European
  • Conference_Location
    Rome, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.1976.332347
  • Filename
    4131013