DocumentCode
1969071
Title
New Transistor Operating for High Frequency and High Power
Author
Nishizawa, Jun-ichi ; Kato, Yoji
Author_Institution
Research Institute of Electrical Communication, Tohoku University, Sendai, Japan.
fYear
1976
fDate
14-17 Sept. 1976
Firstpage
616
Lastpage
620
Abstract
The main mechanism of operation of a new transistor which shows exponential I-V character, is based on the static induction and is called SIT (Static Induction Transistor). SIT is a promissing device also for higher frequency operation because of (1) short channel length, (2) lower gate series resistance, (3) small gate-source capacitance, (4) small gate-drain capacitance. Si SIT exhibits GHz operation: 200 MHz-40 watts, 1 GHz-5 watts, cut-off frequency is more than 2.0 GHz. Further developments of higher frequency and, higher power devices can be realized in distributed structure and travelling-wave operation of SIT. It will be soon possible to prepare an SIT which operates 100 watts out-put power at GHz frequencies.
Keywords
Capacitance; Communication system control; Electrodes; FETs; Frequency; Impedance; Impurities; Microwave transistors; Negative feedback; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1976. 6th European
Conference_Location
Rome, Italy
Type
conf
DOI
10.1109/EUMA.1976.332347
Filename
4131013
Link To Document