Title :
Reliability issues of MOS and bipolar ICs
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Reliability issues affecting MOS and bipolar ICs are reviewed. Hot-carrier-induced degradation of MOS and bipolar circuits are used to illustrate the potential role of reliability CAD tools. Electromigration lifetimes under pulse DC and AC current stressing are longer than previously thought. Oxide breakdown offers a case study for accelerated test modeling, defect statistics, and burn-in optimization
Keywords :
MOS integrated circuits; bipolar integrated circuits; circuit CAD; circuit reliability; electromigration; hot carriers; integrated circuit testing; MOS; accelerated test modeling; bipolar ICs; bipolar circuits; burn-in optimization; defect statistics; electromigration lifetimes; hot carrier induced degradation; oxide breakdown; pulse AC current stressing; pulse DC current stressing; reliability CAD tools; CMOS logic circuits; CMOS technology; Degradation; Electric breakdown; Electromigration; Electrostatic discharge; Failure analysis; Hot carriers; Passivation; Stress;
Conference_Titel :
Computer Design: VLSI in Computers and Processors, 1989. ICCD '89. Proceedings., 1989 IEEE International Conference on
Conference_Location :
Cambridge, MA
Print_ISBN :
0-8186-1971-6
DOI :
10.1109/ICCD.1989.63404
