DocumentCode :
1969403
Title :
Terahertz generation by optical rectification in GaAs and related materials
Author :
Lewis, R.A.
Author_Institution :
Inst. of Supercond. & Electron. Mater., Univ. of Wollongong, Wollongong, NSW, Australia
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
1
Abstract :
Ultrashort near-infrared laser pulses may generate terahertz radiation by transient current effects, including surface field and photo-Dember effects, and optical rectification. Distinguishing these effects in GaAs and related materials will be discussed.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; laser beams; microwave photonics; optical materials; terahertz wave generation; GaAs; gallium arsenide; optical rectification; photo-Dember effect; surface field effect; terahertz generation; transient current effect; ultrashort near-infrared laser pulse; Gallium arsenide; Geometrical optics; Nonlinear optics; Optical harmonic generation; Optical materials; Optical mixing; Optical pumping; Optical surface waves; Superconducting materials; Surface emitting lasers; GaAs; T-ray; THz; Terahertz; optical rectification;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292101
Filename :
5292101
Link To Document :
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