Verify: key to the stable single-electron-memory operation

The impact of verify, which has been used in flash memory but has not been associated with single-electron memory, is analyzed and experimentally demonstrated. Using verify overcomes many obstacles to large-scale integration, including background charge variation, the inherent stochastic behavior of single-electron dynamics, and nanoscale structure variation, especially in naturally formed nanostructures, such as nano-silicon. A write/erase endurance of 10/sup 7/ cycles was demonstrated with nano-Si memory devices.