Title :
Room temperature Nb/Nb oxide-based single-electron transistors
Author :
Shirakashi, J.-I. ; Matsumoto, K. ; Miura, N. ; Konagai, M.
Author_Institution :
Electrotech. Lab., Tokyo Inst. of Technol., Japan
Abstract :
Room temperature operation of Nb/Nb oxide-based single-electron transistors (SETs) was successfully achieved and is reported in detail. First, the SETs were fabricated by a scanning probe microscope (SPM)-based anodic oxidation technique, and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two kinds of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.
Keywords :
MIM devices; niobium; niobium compounds; oxidation; quantum interference devices; single electron transistors; tunnel transistors; 298 K; Coulomb blockade; MIM devices; Nb-NbO; anodic oxidation technique; junction area; room temperature operation; scanning probe microscope; single-electron charging effects; single-electron transistors; thermal oxidation; tunnel junction devices; ultra-small tunnel junctions; Atomic force microscopy; Fabrication; Lithography; Niobium; Optical films; Oxidation; Scanning probe microscopy; Single electron transistors; Temperature; Wires;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650302
