Title :
High-speed modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers
Author :
Tanaka, Yu ; Takada, Kan ; Ishida, Mitsuru ; Nakata, Yoshiaki ; Yamamoto, Tsuyoshi ; Yamaguchi, Masaomi ; Nishi, Kenichi ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
High-speed modulation characteristics of 1.3-μm InAs/GaAs high-density quantum-dot lasers are presented. The high-density quantum-dot active layers provided high net modal gain beyond 40cm-1. Fabricated Fabry-Perot lasers have exhibited an extended modulation bandwidth and 25-Gbps direct modulation, for the first time, in 1.3-μm quantum dot lasers.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; Fabry-Perot lasers; InAs-GaAs; bit rate 25 Gbit/s; high-density quantum dot lasers; high-speed modulation; modal gain; wavelength 1.3 mum; Bandwidth; Gain; Gallium arsenide; Modulation; Quantum dot lasers; Temperature;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682637
