Optimisation of the Growth by MOVPE of GaSb/lnAs and lnGaSb/lnAs Double Heterojunctions and Strained Layer Superlattices on [111] GaAs Substrates

Author

Lakrimi, M. ; Martin, R.W. ; Mason, N.J. ; Nicholas, R.J. ; Walker, P.J.

Author_Institution

Department of Physics, Clarendon Laboratory, Oxford

fYear

1992

fDate

8-11 Jun 1992

Firstpage

Lastpage

Keywords

Epitaxial growth; Epitaxial layers; Heterojunctions;

fLanguage

English

Publisher

ieee

Conference_Titel

Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference

Print_ISBN

0-87942-652-7

Type

DOI

10.1109/MOVPE.1992.664946

Filename

664946

Link To Document