DocumentCode
1969629
Title
InGaAsP/InP bistability triangle microlasers
Author
Huang, Yong-Zhen ; Yang, Yue-De ; Wang, Shi-Jiang ; Xiao, Jin-Long ; Du, Yun
Author_Institution
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
fYear
2009
fDate
30-3 Aug. 2009
Firstpage
1
Lastpage
2
Abstract
Optical bistability in equilateral- triangle-resonator (ETR) microlasers are analyzed based on two mode rate equations with asymmetrical cross gain saturation. Optical bistability is observed in the fabricated InP/GaInAsP ETR microlasers at low temperature.
Keywords
III-V semiconductors; indium compounds; micro-optics; microcavity lasers; optical bistability; optical saturation; semiconductor lasers; InGaAsP-InP; asymmetrical cross gain saturation; bistability triangle microlaser; equilateral triangle resonator microlaser; optical bistability; two mode rate equation; Indium phosphide; Laser modes; Optical waveguides; Q factor; Semiconductor lasers; Semiconductor waveguides; Surface emitting lasers; Tellurium; Vertical cavity surface emitting lasers; Waveguide lasers; Bistability laser; optical microcavity; semiconductor laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3829-7
Electronic_ISBN
978-1-4244-3830-3
Type
conf
DOI
10.1109/CLEOPR.2009.5292112
Filename
5292112
Link To Document