DocumentCode :
1969629
Title :
InGaAsP/InP bistability triangle microlasers
Author :
Huang, Yong-Zhen ; Yang, Yue-De ; Wang, Shi-Jiang ; Xiao, Jin-Long ; Du, Yun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing, China
fYear :
2009
fDate :
30-3 Aug. 2009
Firstpage :
1
Lastpage :
2
Abstract :
Optical bistability in equilateral- triangle-resonator (ETR) microlasers are analyzed based on two mode rate equations with asymmetrical cross gain saturation. Optical bistability is observed in the fabricated InP/GaInAsP ETR microlasers at low temperature.
Keywords :
III-V semiconductors; indium compounds; micro-optics; microcavity lasers; optical bistability; optical saturation; semiconductor lasers; InGaAsP-InP; asymmetrical cross gain saturation; bistability triangle microlaser; equilateral triangle resonator microlaser; optical bistability; two mode rate equation; Indium phosphide; Laser modes; Optical waveguides; Q factor; Semiconductor lasers; Semiconductor waveguides; Surface emitting lasers; Tellurium; Vertical cavity surface emitting lasers; Waveguide lasers; Bistability laser; optical microcavity; semiconductor laser;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
Type :
conf
DOI :
10.1109/CLEOPR.2009.5292112
Filename :
5292112
Link To Document :
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