Title :
Phonon engineering in nanoscale layered structures
Author :
Rostami, A. ; Alizade, A. ; Baghban, H.
Abstract :
GaN/AlGaN heterostructure thermal conductivity is investigated considering steady-state phonon Boltzman equation and relaxation-time approximation using phonon density of states, average group velocity and phonon relaxation time. It has concluded that proper selection of layer widths yields minimum thermal conduction for considered structure. Also, making asymmetric structure, affects the thermal conduction.
Keywords :
Boltzmann equation; III-V semiconductors; aluminium compounds; gallium compounds; nanostructured materials; phonons; thermal conductivity; wide band gap semiconductors; GaN-AlGaN; asymmetric structure; average group velocity; heterostructure thermal conductivity; nanoscale layered structures; phonon density of states; phonon engineering; phonon relaxation-time approximation; steady-state phonon Boltzman equation; Conductivity; Dispersion; Equations; Gallium nitride; Mathematical model; Phonons; Thermal conductivity;
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
DOI :
10.1109/ACP.2010.5682641
