Title :
808 nm TM-polarized GaAsP/AlGaAs high-power Al-free-active region laser diodes with high efficiency and small divergence
Author :
Sebastian, J. ; Bugge, F. ; Erbert, G. ; Hänsel, H.G. ; Buhrandt, F. ; Knauer, A. ; Hülsewede, R. ; Wenzel, H. ; Staske, R. ; Sumpf, B. ; Weyers, M. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Abstract :
The laser structures were grown by LP-MOVPE on GaAs substrates. All structures have a single tensile-strained GaAsP QW. The QW is embedded in a 1000 nm or 2000 nm thick AlGaAs waveguide layer. The high gain of tensile strained GaAsP QWs in combination with a low loss large optical cavity (LOC) broadened waveguide structure results in low threshold current narrow beam lasers with high efficiency. Based on this vertical structure we investigated single broad emitter lasers, laser bars, lasers with self aligned stripe structure and with tapered gain region
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; laser beams; laser cavity resonators; laser transitions; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 1000 nm; 2000 nm; 808 nm; GaAsP-AlGaAs; LP-MOVPE; TM-polarized GaAsP/AlGaAs high-power Al-free-active region laser diodes; high efficiency; laser bars; low loss large optical cavity broadened waveguide structure; low threshold current narrow beam lasers; self aligned stripe structure; single broad emitter lasers; single tensile-strained GaAsP QW; small divergence; tapered gain region; tensile strained GaAsP QWs; vertical structure; Aluminum; Bars; Diode lasers; Laser beams; Laser modes; Power generation; Power lasers; Quantum well lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-7105-4
DOI :
10.1109/LEOS.2001.969208
