A GaAs FET Designed for Maximum Flexibility in Electrical Performance

A simple process has been developped which enables us to produce GaAs FET´s with enough flexibility in the geometry to adjust for a wide range of circuits requirements. In order to gain control on the active layer we used ion implantation on semi-insulating substrates. Results obtained an epitaxial and implanted layers are compared. Power output and S parameters are measured as a function of the gate width.