DocumentCode :
1969764
Title :
In Situ Control of Heterointerface Quality in MOVPE by Surface Photo-Absorption
Author :
Kobayashi, Naoki ; Kobayashi, Yasuyuki
Author_Institution :
NTT Basic Research Laboratories, Tokyo
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
82
Lastpage :
83
Keywords :
Atom optics; Capacitive sensors; Electron optics; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Reflectivity; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.664949
Filename :
664949
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1969764
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