Title :
Design of Linear Gaas FET Amplifiers
Author :
Kelly, W.M. ; de Koning, J.G. ; Monroe, J.W. ; Tokuda, H.
Author_Institution :
Microwave Semiconductor, Division, Hewlett-Packard Company, Palo Alto, California 94304
Abstract :
A newly developed technique is described for maximizing one dB compression output power of a microwave amplifier across practical bandwidths. Gain compression characteristics at X-band of a packaged GaAs FET are presented. A single stage design example is presented, and performance of a 100 mW, three-stage, 9 GHz to 10 GHz amplifier is described.
Keywords :
Bandwidth; Gallium arsenide; Impedance; Microwave FETs; Microwave amplifiers; Microwave theory and techniques; Microwave transistors; Packaging; Power generation; Tuners;
Conference_Titel :
Microwave Conference, 1977. 7th European
Conference_Location :
Copenhagen, Denmark
DOI :
10.1109/EUMA.1977.332411
