Title :
Physical Modeling of Deep-Submicron Devices
Author_Institution :
Integrated Systems Laboratory, ETH Z¨urich, Switzerland
fDate :
11-13 September 2001
Keywords :
Boundary conditions; Charge carrier processes; Equations; MOSFETs; Potential well; Quantization; Quantum computing; Semiconductor device modeling; Semiconductor process modeling; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195198
