Title :
Compensation devices versus power MOS and high speed IGBT - a device physics based guideline for the application
Author :
Deboy, Gerald ; Purschel, Marco ; Schmitt, Markus ; Willmeroth, Armin
Author_Institution :
Infineon Technologies AG, Germany
fDate :
11-13 September 2001
Keywords :
Artificial intelligence; Diodes; Doping profiles; Guidelines; Insulated gate bipolar transistors; MOSFET circuits; Physics; Power MOSFET; Transconductance; Voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195205
