NO oxides for low noise 0.18um analog CMOS

Author

Da Rold, M. ; Simoen, E. ; De Jaeger, B. ; Lietaer, N. ; Rothschild, A. ; De Keersgieter, A. ; Decoutere, S.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

11-13 September 2001

Firstpage

111

Lastpage

114

Keywords

Acoustical engineering; Annealing; Boron; CMOS process; CMOS technology; MOS devices; Nitrogen; Noise level; Oxidation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195213

Filename

1506595

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