DocumentCode
1970186
Title
Arsenic and Phosphorus co-Implantation for Deep Submicron CMOS Gate and Source/Drain Engineering
Author
Augendre, E. ; De Keersgieter, A. ; Kubicek, S. ; Redolfi, A. ; Van Laer, J. ; Badenes, G.
Author_Institution
IMEC, Leuven, Belgium
fYear
2001
fDate
11-13 September 2001
Firstpage
115
Lastpage
118
Keywords
CMOS technology; Capacitors; Costs; Distortion measurement; Doping profiles; Parasitic capacitance; Pulp manufacturing; Quantum capacitance; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195214
Filename
1506596
Link To Document