Simulation study of 3-D gamma-ray imager with Si/CdTe semiconductor Compton camera

Author

Takeda, Shin´ichiro ; Takahashi, Tadayuki ; Ishikawa, Shin-nosuke ; Odaka, Hirokazu ; Watanabe, Shin ; Tajima, Hiroyasu ; Kawachi, Naoki ; Nakano, Takashi

Author_Institution

RIKEN Center for Mol. Imaging Sci., Kobe, Japan

fYear

2010

fDate

23-25 Feb. 2010

Firstpage

170

Lastpage

174

Abstract

A semiconductor Compton camera with wide-band imaging capability and high energy resolution is expected to provide new in-vivo data that enables tracking of multiple RI-labeled molecular probes. In our previous works, we have constructed prototype Compton cameras composed of Si and CdTe semiconductor detectors, and demonstrated wide-band imaging of 60-662 keV gamma-rays with a spatial resolution on the order of millimeters for a 2-D target. The feasibility of 3-D imaging is studied by Monte Carlo simulations that were validated in our previous work, in order to apply this camera to in-vivo molecular imaging and clinical use.

Keywords

Monte Carlo methods; biomedical equipment; biomedical imaging; gamma-ray detection; semiconductor counters; 3D gamma-ray imager; Monte Carlo simulations; Si/CdTe semiconductor Compton camera; electron volt energy 60 keV to 662 keV; high energy resolution camera; in-vivo molecular imaging; multiple RI-labeled molecular probes; wide-band imaging capability; Cameras; Energy resolution; Gamma ray detection; Gamma ray detectors; High-resolution imaging; Optical imaging; Probes; Prototypes; Target tracking; Wideband; CdTe detector; Double-sided silicon strip detector; Medical imaging; Semiconductor Compton camera;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors Applications Symposium (SAS), 2010 IEEE

Conference_Location

Limerick

Print_ISBN

978-1-4244-4988-0

Electronic_ISBN

978-1-4244-4989-7

Type

conf

DOI

10.1109/SAS.2010.5439430

Filename

5439430