DocumentCode :
1970217
Title :
Structural Improvement of Nickel Metal-Induced-Lateral-Crystallized Silicon Films Using Excimer Laser Annealing
Author :
Miyasaka, M. ; Makihira, K. ; Asano, T. ; Stoemenos, J.
Author_Institution :
Seiko Epson Corporation, BTRC, Suwa, Japan
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
123
Lastpage :
126
Keywords :
Amorphous silicon; Annealing; Crystal microstructure; Crystallization; Nickel; Protection; Semiconductor films; Silicon on insulator technology; Substrates; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195216
Filename :
1506598
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1970217
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