DocumentCode :
1970242
Title :
Third order silicon (Si) nitride side-walled grating using silicon-on-insulator (SOI)
Author :
Png, Ching Eng ; Lim, Sze Ter ; Li, E.P. ; Pan, L. ; Danner, Aaron J.
Author_Institution :
Adv. Photonics & Plasmonics, A*Star, Singapore, Singapore
fYear :
2010
fDate :
8-12 Dec. 2010
Firstpage :
653
Lastpage :
654
Abstract :
We demonstrate three-dimensional simulation of a third order silicon-based grating with full-width-half-maximum (FWHM) reflection bandwidth of 4nm. This provides more than 2 orders of magnitude improvement over a conventional side-walled grating structure. The relationship of grating performance over the infra-red wavelength range is also presented.
Keywords :
Bragg gratings; integrated optics; silicon compounds; silicon-on-insulator; wide band gap semiconductors; Si; Si3N4; full-width-half-maximum reflection bandwidth; infrared wavelength range; silicon-on-insulator; third order silicon nitride side-walled grating; three-dimensional simulation; Bandwidth; Bragg gratings; Fabrication; Gratings; Reflection; Silicon; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communications and Photonics Conference and Exhibition (ACP), 2010 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-7111-9
Type :
conf
DOI :
10.1109/ACP.2010.5682673
Filename :
5682673
Link To Document :
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