A Novel DRAM Technology using Dual Spacer and mechanically Robust Capacitor for 0.12um DRAM and beyond

Author

Lee, Jaegoo ; Lee, Jinwoo ; Koh, Kwanhyeob ; Lee, Kyuhyun ; Cho, Changhyun ; Jeong, Gitae ; Jeong, Hongsik ; Chung, TaeYoung ; Kim, Kinam

Author_Institution

Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea

fYear

2001

fDate

11-13 September 2001

Firstpage

127

Lastpage

130

Keywords

Bridge circuits; Capacitors; Etching; Lithography; Parasitic capacitance; Random access memory; Robustness; Shape; Space technology; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2001. Proceeding of the 31st European

Print_ISBN

2-914601-01-8

Type

DOI

10.1109/ESSDERC.2001.195217

Filename

1506599

Link To Document