Title :
A Novel DRAM Technology using Dual Spacer and mechanically Robust Capacitor for 0.12um DRAM and beyond
Author :
Lee, Jaegoo ; Lee, Jinwoo ; Koh, Kwanhyeob ; Lee, Kyuhyun ; Cho, Changhyun ; Jeong, Gitae ; Jeong, Hongsik ; Chung, TaeYoung ; Kim, Kinam
Author_Institution :
Samsung Electronics Co., Yongin-City, Kyungki-Do, Korea
fDate :
11-13 September 2001
Keywords :
Bridge circuits; Capacitors; Etching; Lithography; Parasitic capacitance; Random access memory; Robustness; Shape; Space technology; Stability;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195217
