Title :
A Trench DRAM Gain Cell for High Signal Charge at Reduced Cell Area
Author :
Krautschneider, W.H. ; Hofmann, F.
Author_Institution :
Technical University of Hamburg-Harburg, Germany
fDate :
11-13 September 2001
Keywords :
Capacitance; Dielectrics; Diodes; Etching; MOS capacitors; MOSFETs; Performance gain; Random access memory; Signal processing; Testing;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195219
