DocumentCode :
1970338
Title :
Electrical Characterization of Memory-Cell Structures Employing Ultra-Thin Al2O3 Film as Storage Node
Author :
Fernandes, A. ; De Salvo, B. ; Masson, P. ; Pananakakis, G. ; Ghibaudo, G. ; Baron, T. ; Buffet, N. ; Mariolle, D. ; Guillaumot, B.
Author_Institution :
CEA/LETI, France
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
139
Lastpage :
142
Keywords :
Aluminum oxide; Atomic layer deposition; Dielectric devices; Dielectric thin films; Flash memory; Nanocrystals; Nonvolatile memory; Silicon; Sputtering; Thin film devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195220
Filename :
1506602
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1970338
