Title :
70 nm Damascene-Gate MOSFETs with Minimal Polysilicon Gate-Depletion
Author :
Hanafi, Hussein I. ; Arndt, Russell ; Boyd, Diane ; Natzle, Wesley ; Ticknor, Adam
Author_Institution :
IBM Research Division, Yorktown Heights, USA
fDate :
11-13 September 2001
Keywords :
Annealing; Boron; CMOS process; Capacitance measurement; Chemicals; Electrodes; Fabrication; MOS devices; MOSFETs; Microelectronics;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195221
