Continuous wave operation of buried heterostructure quantum cascade lasers

Author

Beck, M. ; Hofstetter, D. ; Aellen, T. ; Faist, J.

Author_Institution

Inst. de Phys., Neuchatel Univ.

Volume

1

fYear

2001

fDate

2001

Firstpage

198

Abstract

We present buried heterostructure QC lasers with optimized design, an improved waveguiding scheme and better heat dissipation for high temperature CW operation. The laser´s lower waveguide cladding and waveguide core consisted of ternary InAlAs and InGaAs layers grown lattice matched to an n-doped InP substrate by molecular beam epitaxy (MBE). The active region is a repetition of 35 stages, each stage comprising a four quantum well active zone designed for emission at 9.1 μm

Keywords

III-V semiconductors; aluminium compounds; cooling; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; ridge waveguides; waveguide lasers; 9.1 micron; InAlAs layers; InAlAs-InGaAs; InGaAs layers; InP; MBE; active region; buried heterostructure quantum cascade lasers; continuous wave operation; heat dissipation; high temperature CW operation; lattice matched; lower waveguide cladding; molecular beam epitaxy; n-doped InP substrate; quantum well active zone; quantum well lasers; waveguide core; waveguiding scheme; Design optimization; Indium compounds; Indium gallium arsenide; Lattices; Molecular beam epitaxial growth; Optical design; Quantum cascade lasers; Quantum well lasers; Temperature; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2001. LEOS 2001. The 14th Annual Meeting of the IEEE

Conference_Location

San Diego, CA

ISSN

1092-8081

Print_ISBN

0-7803-7105-4

Type

conf

DOI

10.1109/LEOS.2001.969241

Filename

969241