Title :
The Effect of Impact Ionization on the Subthreshold Leakage Current in N-Channel Double-Gate SOI Transistors
Author :
Park, Jae-Kwan ; Deshpande, H.V. ; Woo, J.C.S.
Author_Institution :
University of California, Los Angeles, USA
fDate :
11-13 September 2001
Keywords :
Charge carrier processes; Current measurement; Electric variables; Electric variables measurement; Impact ionization; Leakage current; Length measurement; MOSFETs; Subthreshold current; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195226
