DocumentCode
1970481
Title
Dielectric Discharging processes in RF-MEMS Capacitive Switches
Author
Papaioannou, George ; Papandreou, Eleni ; Papapolymerou, John ; Daigler, Richard
Author_Institution
Phys. Dept. Nat. Kapodistrian, Univ. of Athens, Athens
fYear
2007
fDate
11-14 Dec. 2007
Firstpage
1
Lastpage
4
Abstract
The discharging processes in silicon nitride dielectric film of RF-MEMS capacitive switches are investigated for the first time. The study includes the dependence of discharging as a function of temperature that allows the detection of thermally activated mechanisms. The discharging time constants were found to depend only on temperature and not on the actuation bias polarity.
Keywords
dielectric thin films; microswitches; silicon compounds; RF-MEMS capacitive switches; dielectric discharging process; microelectromechanical devices; silicon nitride dielectric film; thermally activated mechanism; Bridge circuits; Dielectric films; Dielectric materials; MIM capacitors; Micromechanical devices; Physics; Polarization; Radiofrequency microelectromechanical systems; Space charge; Switches; Dielectric polarization; microelectromechani-cal devices; reliability; surface charging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location
Bangkok
Print_ISBN
978-1-4244-0748-4
Electronic_ISBN
978-1-4244-0749-1
Type
conf
DOI
10.1109/APMC.2007.4554527
Filename
4554527
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