Title :
Thermal Robustness of Silicon-on-Insulator Versus Bulk Material in L-Band RF Power LDMOSFETs
Author :
McShane, Erik A. ; Shenai, Krishna
Author_Institution :
University of Illinois, Chicago, USA
fDate :
11-13 September 2001
Keywords :
Electrodes; Finite element methods; Implants; L-band; Numerical simulation; Radio frequency; Robustness; Silicon on insulator technology; Temperature; Transconductance;
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
DOI :
10.1109/ESSDERC.2001.195227
