Efficacy of Ar in reducing the kink effect on floating-body NFD/SOI CMOS

Author

Chang, D. ; Veeraraghavan, S. ; Mendicino, M. ; Rashed, M. ; Connelly, D. ; Jallepalli, S. ; Candelaria, J.

Author_Institution

Networking & Comput. Syst. Group, Motorola Inc., Austin, TX, USA

fYear

1998

fDate

5-8 Oct. 1998

Firstpage

155

Lastpage

156

Abstract

Despite recent reports of high speed nonfully-depleted (NFD) silicon-on-insulator (SOI) CMOS processes (Assaderaghi et al. 1997), there are growing concerns about SOI scalability due to the off-state leakage current induced by parasitic bipolar effects (Chau et al. 1997). To reduce these, Ar implantation into source/drain regions, creating recombination centers in the silicon, has been proposed (Ohno et al. 1995). In this work, the effects of Ar implantation on device performance at different temperatures and supply voltages are examined for deep submicron technologies.

Keywords

CMOS integrated circuits; argon; doping profiles; electron-hole recombination; integrated circuit reliability; integrated circuit testing; ion implantation; leakage currents; silicon-on-insulator; Ar implantation; Ar implantation effects; Ar source/drain implantation; SOI scalability; Si recombination centers; Si-SiO/sub 2/; Si:Ar-SiO/sub 2/; device performance; device temperature; floating-body NFD/SOI CMOS; kink effect; nonfully-depleted SOI CMOS processes; nonfully-depleted silicon-on-insulator CMOS processes; off-state leakage current; parasitic bipolar effects; supply voltage; Argon; Boron; Current measurement; Degradation; Implants; Leakage current; MOS devices; Silicon; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1998. Proceedings., 1998 IEEE International

Conference_Location

Stuart, FL, USA

ISSN

1078-621X

Print_ISBN

0-7803-4500-2

Type

conf

DOI

10.1109/SOI.1998.723158

Filename

723158