Title :
Characterization of surface- and buried-channel detection transistors for CCD on-chip amplifiers
Author :
Centen, P.G. ; Roks, E.
Author_Institution :
Philips Imaging Technol., Eindhoven, Netherlands
Abstract :
Low noise floating-diffusion amplifiers, made in double and single layer membrane poly-Si technology, are characterized including scaling rules for the 1/f noise, thermal noise, 3 dB bandwidth and conversion gain. A comparison is made between buried- and surface-channel detection node transistors for various channel widths, lengths, and bias currents. A new method for measuring the total detection node capacitance is used. The results are modeled using a noise model that includes shot noise from hot-electron effects.
Keywords :
1/f noise; MOSFET; amplifiers; capacitance; charge-coupled device circuits; hot carriers; shot noise; thermal noise; 1/f noise; CCD on-chip amplifier; Si; bandwidth; buried-channel detection transistor; conversion gain; double layer membrane poly-Si technology; floating-diffusion amplifier; hot-electron effect; node capacitance measurement; noise model; scaling rule; shot noise; single layer membrane poly-Si technology; surface-channel detection transistor; thermal noise; Biomembranes; Charge coupled devices; Clocks; Frequency; MOSFETs; Noise generators; Pixel; Predictive models; Signal to noise ratio; Transconductance;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650311
