Title :
The transmission characteristic of GaAs photoconductive semiconductor switch
Author :
Ma, Xiangrong ; Shi, Wei ; Xue, Hong ; Ji, WeiLi
Author_Institution :
Dept. of Appl. Phys., Xi´´an Univ. of Technol., Xi´´an, China
Abstract :
The paper introduced the rate equation to describe the carrier density of the GaAs photoconductive semiconductor switch (PCSS) medium. This solution leaded to a Pspice model for the switch using a time-varying resistor model. Analytical and experimental results were compared.
Keywords :
SPICE; gallium arsenide; photoconducting switches; semiconductor switches; GaAs; PSPICE model; photoconductive semiconductor switch; time-varying resistor model; Circuit simulation; Distributed parameter circuits; Gallium arsenide; Photoconducting devices; Power semiconductor switches; Power transmission lines; Pulse circuits; Resistors; Surface resistance; Voltage; Photoconductive semiconductor switch (PCSS); Pspice; time-varying resistor; transmission characteristic;
Conference_Titel :
Lasers & Electro Optics & The Pacific Rim Conference on Lasers and Electro-Optics, 2009. CLEO/PACIFIC RIM '09. Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3829-7
Electronic_ISBN :
978-1-4244-3830-3
DOI :
10.1109/CLEOPR.2009.5292154
