DocumentCode :
1970570
Title :
Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise
Author :
Prest, M.J. ; Palmer, M.J. ; Braithwaite, G. ; Grasby, T.J. ; Phillips, P.J. ; Mironov, O.A. ; Parker, E.H.C. ; Whall, T.E. ; Waite, A.M. ; Evans, A.G.R.
Author_Institution :
University of Warwick, Coventry, UK
fYear :
2001
fDate :
11-13 September 2001
Firstpage :
179
Lastpage :
182
Keywords :
Computer science; Frequency; Germanium silicon alloys; Low voltage; MOSFETs; Noise reduction; Oxidation; Physics; Silicon germanium; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN :
2-914601-01-8
Type :
conf
DOI :
10.1109/ESSDERC.2001.195230
Filename :
1506612
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1970570
