DocumentCode
1970570
Title
Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise
Author
Prest, M.J. ; Palmer, M.J. ; Braithwaite, G. ; Grasby, T.J. ; Phillips, P.J. ; Mironov, O.A. ; Parker, E.H.C. ; Whall, T.E. ; Waite, A.M. ; Evans, A.G.R.
Author_Institution
University of Warwick, Coventry, UK
fYear
2001
fDate
11-13 September 2001
Firstpage
179
Lastpage
182
Keywords
Computer science; Frequency; Germanium silicon alloys; Low voltage; MOSFETs; Noise reduction; Oxidation; Physics; Silicon germanium; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2001. Proceeding of the 31st European
Print_ISBN
2-914601-01-8
Type
conf
DOI
10.1109/ESSDERC.2001.195230
Filename
1506612
Link To Document